Thin Film Preparation
The workhorse of our thin film laboratory is a multi-chamber ultra-high vacuum (UHV) sytem
for the growth of intermetallic compounds, metallic heterostructures, organic thin films and oxide layers. Its design principle is based on modularity and extensibility. Its setup was initiated in June 2004 and its presently fully functional.
For the preparation of nanostructures by means of ion beam etching and ion beam induced deposition, as well as electron beam induced deposition and electron beam lithography we are presently using
- a scanning electron microscopy (SEM) by Jeol (Jeol 6100) with a home-built one-channel gas injection system and scan generator
- a dual beam electron/ion microscope with 4-channel gas injection and energy dispersive x-ray analysis (FEI Nova NanoLab 600)
Structural and Morphological Characterization
- X-ray diffraction: Ex-situ structural characterization of our thin film samples is done by means of x-ray diffraction on either a dedicated thin film diffractometer (Bruker MRD) or a four-circle diffractometer (Stoe). The Bruker MRD features a primary side Goebel mirror, an open Eulerian cradle, and an optional secondary side single-bounce Ge monochromator. It is furthermore equipped with a reflectometry and glancing incidence diffraction option. The four-circle diffractometer has has a closed Eulerian cradle, primary single-bounce graphite monochromator and a simple beam collimation. Both diffractometers are equipped with Cu-Kalpha fine focus x-ray tubes.
- Electron diffraction: During film growth we employ electron diffraction in glancing incidence geometry (RHEED: reflection high energy electron diffraction) in our MBE for metallic thin films. Electron diffraction in normal incidence (LEED: low energy electron diffraction) is employed in the MBE systems for metallic and organic layers.
- Scanning tunneling microscopy (STM): For morphological studies we use a STM (Burleigh Atos 5000) which is also suitable for operation in an UHV environment.
- An atomic force microscope (Nanosurf EasyScan 2) for different types of contact and non-contact measurements under ambient conditions for routine morphological studies. We furthermore have a home-made AFM for contact mode measurements.
Transport measurements (mainly resistivity, Hall effect, Seebeck effect) can be performed in two cryo systems working in partly overlapping temperature ranges. Both systems are also used for tunneling spectroscopy experiments and electrostatic field effect studies.
- 1.5 K - 300 K @ up to 9 T: Variable temperature insert (VTI) in standard 4He bath cryostate with 9 Tesla superconducting solenoid.
- 1.5 K - 300 K @ up to 14 T: Variable temperature insert (VTI) in standard 4He bath cryostate with 14 Tesla superconducting solenoid.
- 0.28 K - 80 K @ up to 11 T: 3He cryostate in top-loading design with 9/11 Tesla superconducting solenoid.
- Optical microscopes: For sample inspection and wiring for transport measurements we use simple stereo microscopes. For high magnification, phase contrast, Kerr microscopy and surface photography we use a dedicated materials research stereo microscope.
- Computer infrastructure: Linux-based computer system within a virtual private network. NIS/NFS server with Raid 5 configuration, backup and print server.
- Electronic equipment: For our transport measurements we use various electronic devices, such as a nanovoltmeter, electrometers, a source meter, an LCR-meter, Lock-in amplifiers, various multimeters, scanners, temperature controllers, etc.
geändert am 07. Februar 2012 E-Mail: Prof. Dr. Michael Huthmichael.firstname.lastname@example.org